Augmenting the Memory Window of Charge Trap Flash through Ion Bombardment for Trap Generation | Intelligent Semiconductor and Wearable Devices

Augmenting the Memory Window of Charge Trap Flash through Ion Bombardment for Trap Generation

2024/01/26
Hyunyoung Cho, Seongmin Park, Yoonyoung Chung
Korean Conference on Semiconductors (KCS), Gyeongju, Korea

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